tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 1 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com applications ? ? ? ? ? ? 20 pin 3x4mm qfn product features ? ? sat ): 15 w ? ? ? functional block diagram general description the TQP0103 is a wide band over - molded qfn discrete power amplifier. the device is a single stage unmatched power amplifier transistor. the tqp010 3 can be used in doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. the TQP0103 can also be used as a driver in a macrocell base station power amplifier. the wide bandwidth of t he TQP0103 makes it suitable for many difference applications from dc to 4 ghz. TQP0103 can deliver p sat of 15 w at 28 to 32 v operation. lead - free and rohs compliant. ordering information part no. eccn description TQP0103 ear99 15 w, dc to 4 ghz, gan pa TQP0103 - pcb ear99 2.5 - 2.7 ghz evaluation board pin configuration pin no. label 1 - 2, 5 - 11, 16 - 20 n/c 3 - 4 rf in, v g 12 - 15 rf out, v d backside paddle rf/dc gnd
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 2 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com absolute maximum ratings parameter rating gate voltage (v g ) ?6 v d ) +40 v peak rf input power 32 dbm vswr mismatch, p1db pulse (20% duty cycle, 100 s width), t = 25c 10:1 storage temperature ?6 operation of this device outside the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max units operating temperature ?40 g ) ?2.9 d ) 32 v quiescent current ( i cq ) 70 ma t ch for >10 6 hours mttf 225 c electrical performance is measured under conditions noted in the electrical specifications table. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: v g = - 3.03 v, v d = 32 v, i cq = 70 ma, t = 25c . 2.6 ghz single - ended applications circuit parameter conditions min typ max units frequency range dc 4000 mhz quiescent current 60 70 80 ma linear gain p out = 3 0 dbm, pulsed (10% d uty c ycle, 1 00 s width ) 17 19 db p3db pulsed (1 0% d uty cycle, 1 00 s width) 41.2 42 dbm drain efficiency p3db 60 6 4 % input return loss 14 db electrical specifications parameter conditions value units thermal resistance at average power ( jc ) t case = 85c, t ch = 135.2c, cw: p diss = 7.03 w, p out = 1.44 w 7.1 c/w thermal resistance at saturated power ( jc ) t case = 85c, t ch = 184.0c, cw: p diss = 12.75 w, p out = 22.49 w 7.8 c/w notes: 1. thermal resistance measured to package backside. median lifetime 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime (hours) channel temperature ( c) median lifetime vs. channel temperature
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 3 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com evaluation board layout bill of material s reference des. value description manuf. part number c1, c3, c4 10.0 pf capacitor atc 600s c2 22.0 pf capacitor atc 600s c9 0.5 pf capacitor (dnp) r1 20 ? 10 ? 1000 ? 0 ? 0603 - 8 lcr c8 220 f capacitor, electrolytic various c10 1.0 pf capacitor atc 600s c11 10 f capacitor, x7r ceramic c12 1 f capacitor avx 1c105k
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 4 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com performance plots test conditions unless otherwise noted: v d = 32 v, i cq = 70 ma, t = 25c, 2.6 ghz single - ended application circuit 13 14 15 16 17 18 19 20 21 26 28 30 32 34 36 38 40 42 44 46 gain (db) output power (dbm) gain vs. output power v g = ?3.03 v, v d = 32 v, i cq = 70 ma pulse cw: duty cycle = 20%, pulse period = 500 s temp. = +25 c 2500 mhz 2600 mhz 2700 mhz 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 44 46 drain efficiency (%) output power (dbm) drain efficiency vs. output power v g = ?3.03 v, v d = 32 v, i cq = 70 ma pulse cw: duty cycle = 20%, pulse period = 500 s 2500 mhz 2600 mhz 2700 mhz temp. = +25 c 13 14 15 16 17 18 19 20 21 26 27 28 29 30 31 32 33 34 35 36 37 38 39 gain (db) average output power (dbm) gain vs. average output power v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.95 v, v d = 32 v, i dq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c v g = ? 2.90 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c 2500 mhz 2600 mhz 2700 mhz 0 10 20 30 40 50 60 70 80 26 27 28 29 30 31 32 33 34 35 36 37 38 39 drain efficiency (%) average output power (dbm) drain efficiency vs. average output power v g = ? 2.90 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf 2500 mhz 2600 mhz 2700 mhz temp. = +25 c 34 35 36 37 38 39 40 41 42 43 44 45 46 26 27 28 29 30 31 32 33 34 35 36 37 38 39 peak power at 0.01% ccdf (db) average output power (dbm) peak power vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ? 2.90 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 26 27 28 29 30 31 32 33 34 35 36 37 38 39 acpr (dbc) average output power (dbm) acpr vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ? 2.90 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25 c
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 5 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com performance plots test con ditions unless otherwise noted: v d = 32 v, i cq = 70 ma, t = 25c, 2.6 ghz single - ended application circuit -20 -15 -10 -5 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 s 21 (db) frequency (ghz) small signal gain vs. frequency temp. = +25 c -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 s 11 , s 22 (db) frequency (ghz) return loss vs. frequency temp. = +25 c irl orl
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 6 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com load pull plots test conditions unless otherwise noted : v d = 32 v, i cq = 70 ma, t = 25c, pulse cw (duty cycle = 20%, pulse period = 5 00 s)
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 7 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com pin configuration and description pin no. label description 1, 2, 5, 6, 7, 8, 9, 10, 11, 16, 17, 18, 19, 20 n/c no connection 3, 4 rf in, v g rf input, gate bias 12, 13, 14, 15 rf out, v d rf output, drain bias backside paddle rf/dc gnd rf/dc ground
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 8 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com package marking and dimensions marking: part id C C m + lot number C n otes : 1. all dimensions are in millimeters. angles are in degrees. pcb mounting pattern n otes : 0103 yyww mzzz
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 9 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com 1. all dimensions are in millimeters. angles are in degrees.
tq p010 3 15 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev d 09 - 30 - 1 5 - 10 of 10 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: class 1b value: passes 600 v passes 1000 v solderability compatible with both lead - free (260c maximum reflow temperature) and tin/lead (245c maximum reflow temperature) soldering processes. contact plating: nipdau roh s compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? 15 h 12 br 4 0 2 ) free ? ? msl rating msl rating: level 3 test: 260c convection reflow standard: jedec standard ipc/jedec j - std - 020 d.1 eccn us department of commerce ear99 contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@t riquint .com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: btsapplications@tqs.com important notice the information contained here in is believed to be reliable. triquint makes no warranties regarding th e information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user . all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant in formation before placing orders for triquint products. t he information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any oth er intellectual property rights, whether wi th regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failu re would reasonably be expected to cause severe personal injury or death.
|
